1997. 6. 24 1/1 semiconductor technical data KTC3199L epitaxial planar npn transistor revision no : 1 low noise audio amplifier application. features high dc current gain : h fe =70 700. excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). low noise : nf=0.2db(typ.), 3db(max.). complementary to kta1267l. maximum rating (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:70 140, y:120 240, gr:200 400, bl:300~700 characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma emitter current i e -150 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 70 - 700 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf(1) v ce =6v, i c =0.1ma, f=100hz, rg=10k u - 0.5 6.0 db nf(2) v ce =6v, i c =0.1ma, f=1khz, rg=10k u - 0.2 3.0
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